Home / Products / Discrete Semiconductor Products / Transistors - IGBTs - Modules / FZ1800R12HE4B9HOSA2
Part Number | FZ1800R12HE4B9HOSA2 |
Datasheet | FZ1800R12HE4B9HOSA2 datasheet |
Description | MODULE IGBT IHMB190-2 |
Manufacturer | Infineon Technologies |
Series | - |
Part Status | Active |
IGBT Type | Trench Field Stop |
Configuration | Single Switch |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Current - Collector (Ic) (Max) | 2735A |
Power - Max | 11000W |
Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 1800A |
Current - Collector Cutoff (Max) | 5mA |
Input Capacitance (Cies) @ Vce | 110nF @ 25V |
Input | Standard |
NTC Thermistor | No |
Operating Temperature | -40°C ~ 150°C |
Mounting Type | Chassis Mount |
Package / Case | Module |
Supplier Device Package | Module |