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| Part Number | TK10A80W,S4X |
| Datasheet | TK10A80W,S4X datasheet |
| Description | MOSFET N-CH 800V 9.5A TO220SIS |
| Manufacturer | Toshiba Semiconductor and Storage |
| Series | DTMOSIV |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 800V |
| Current - Continuous Drain (Id) @ 25°C | 9.5A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 550 mOhm @ 4.8A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 450µA |
| Gate Charge (Qg) (Max) @ Vgs | 19nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1150pF @ 300V |
| FET Feature | - |
| Power Dissipation (Max) | 40W (Tc) |
| Operating Temperature | 150°C |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220SIS |
| Package / Case | TO-220-3 Full Pack |