Product Introduction
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See Product Specifications
Product Specifications
Part Number |
PDTD123ES,126 |
Datasheet |
PDTD123ES,126 datasheet |
Description |
TRANS PREBIAS NPN 500MW TO92-3 |
Manufacturer |
NXP USA Inc. |
Series |
- |
Part Status |
Obsolete |
Transistor Type |
NPN - Pre-Biased |
Current - Collector (Ic) (Max) |
500mA |
Voltage - Collector Emitter Breakdown (Max) |
50V |
Resistor - Base (R1) |
2.2 kOhms |
Resistor - Emitter Base (R2) |
2.2 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce |
40 @ 50mA, 5V |
Vce Saturation (Max) @ Ib, Ic |
300mV @ 2.5mA, 50mA |
Current - Collector Cutoff (Max) |
500nA |
Frequency - Transition |
- |
Power - Max |
500mW |
Mounting Type |
Through Hole |
Package / Case |
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package |
TO-92-3 |
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