Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased / PDTD123ES,126

Product Introduction

PDTD123ES,126

Part Number
PDTD123ES,126
Manufacturer/Brand
NXP USA Inc.
Description
TRANS PREBIAS NPN 500MW TO92-3
Category
Transistors - Bipolar (BJT) - Single, Pre-Biased
RoHs Status
Lead free / RoHS Compliant
Series
-
Quantity
236pcs Stock Available.

Quick Order

Company
Contact
Phone
Email
Country
Content
Images are for reference only
See Product Specifications

Product Specifications

Part Number PDTD123ES,126
Datasheet PDTD123ES,126 datasheet
Description TRANS PREBIAS NPN 500MW TO92-3
Manufacturer NXP USA Inc.
Series -
Part Status Obsolete
Transistor Type NPN - Pre-Biased
Current - Collector (Ic) (Max) 500mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 2.2 kOhms
Resistor - Emitter Base (R2) 2.2 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max) 500nA
Frequency - Transition -
Power - Max 500mW
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package TO-92-3

Latest Products for Transistors - Bipolar (BJT) - Single, Pre-Biased

FJN3302RBU

ON Semiconductor

TRANS PREBIAS NPN 300MW TO92-3

FJN3303RBU

ON Semiconductor

TRANS PREBIAS NPN 300MW TO92-3

FJN3304RBU

ON Semiconductor

TRANS PREBIAS NPN 300MW TO92-3

FJN3305RBU

ON Semiconductor

TRANS PREBIAS NPN 300MW TO92-3

FJN3306RBU

ON Semiconductor

TRANS PREBIAS NPN 300MW TO92-3

FJN3307RBU

ON Semiconductor

TRANS PREBIAS NPN 300MW TO92-3