Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / SI6968BEDQ-T1-GE3
Part Number | SI6968BEDQ-T1-GE3 |
Datasheet | SI6968BEDQ-T1-GE3 datasheet |
Description | MOSFET 2N-CH 20V 5.2A 8-TSSOP |
Manufacturer | Vishay Siliconix |
Series | TrenchFET® |
Part Status | Active |
FET Type | 2 N-Channel (Dual) Common Drain |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 5.2A |
Rds On (Max) @ Id, Vgs | 22 mOhm @ 6.5A, 4.5V |
Vgs(th) (Max) @ Id | 1.6V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 18nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Power - Max | 1W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-TSSOP (0.173", 4.40mm Width) |
Supplier Device Package | 8-TSSOP |