Home / Products / Discrete Semiconductor Products / Transistors - IGBTs - Modules / BSM100GB170DN2HOSA1
Part Number | BSM100GB170DN2HOSA1 |
Datasheet | BSM100GB170DN2HOSA1 datasheet |
Description | MODULE IGBT 1700V |
Manufacturer | Infineon Technologies |
Series | - |
Part Status | Obsolete |
IGBT Type | - |
Configuration | Half Bridge |
Voltage - Collector Emitter Breakdown (Max) | 1700V |
Current - Collector (Ic) (Max) | 145A |
Power - Max | 1000W |
Vce(on) (Max) @ Vge, Ic | 3.9V @ 15V, 100A |
Current - Collector Cutoff (Max) | 1mA |
Input Capacitance (Cies) @ Vce | 16nF @ 25V |
Input | Standard |
NTC Thermistor | No |
Operating Temperature | 150°C (TJ) |
Mounting Type | Chassis Mount |
Package / Case | Module |
Supplier Device Package | Module |