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Part Number | SSM6J53FE(TE85L,F) |
Datasheet | SSM6J53FE(TE85L,F) datasheet |
Description | MOSFET P-CH 20V 1.8A ES6 |
Manufacturer | Toshiba Semiconductor and Storage |
Series | - |
Part Status | Obsolete |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 1.8A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 2.5V |
Rds On (Max) @ Id, Vgs | 136 mOhm @ 1A, 2.5V |
Vgs(th) (Max) @ Id | 1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 10.6nC @ 4V |
Vgs (Max) | ±8V |
Input Capacitance (Ciss) (Max) @ Vds | 568pF @ 10V |
FET Feature | - |
Power Dissipation (Max) | 500mW (Ta) |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | ES6 (1.6x1.6) |
Package / Case | SOT-563, SOT-666 |