Home / Products / Discrete Semiconductor Products / Transistors - IGBTs - Single / APT65GP60L2DQ2G
Product Introduction
APT65GP60L2DQ2G
- Part Number
- APT65GP60L2DQ2G
- Manufacturer/Brand
- Microsemi Corporation
- Description
- IGBT 600V 198A 833W TO264
- Category
- Transistors - IGBTs - Single
- RoHs Status
- Lead free / RoHS Compliant
- Series
- POWER MOS 7®
- Quantity
- 7046pcs Stock Available.
Images are for reference only
See Product Specifications
See Product Specifications
Product Specifications
| Part Number | APT65GP60L2DQ2G |
| Datasheet | APT65GP60L2DQ2G datasheet |
| Description | IGBT 600V 198A 833W TO264 |
| Manufacturer | Microsemi Corporation |
| Series | POWER MOS 7® |
| Part Status | Not For New Designs |
| IGBT Type | PT |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Current - Collector (Ic) (Max) | 198A |
| Current - Collector Pulsed (Icm) | 250A |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 65A |
| Power - Max | 833W |
| Switching Energy | 605µJ (on), 895µJ (off) |
| Input Type | Standard |
| Gate Charge | 210nC |
| Td (on/off) @ 25°C | 30ns/90ns |
| Test Condition | 400V, 65A, 5 Ohm, 15V |
| Reverse Recovery Time (trr) | - |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-264-3, TO-264AA |
| Supplier Device Package | - |
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