Home / Products / Discrete Semiconductor Products / Transistors - IGBTs - Modules / BSM200GD60DLCBOSA1

Product Introduction

BSM200GD60DLCBOSA1

Part Number
BSM200GD60DLCBOSA1
Manufacturer/Brand
Infineon Technologies
Description
IGBT 2 LOW POWER ECONO3-1
Category
Transistors - IGBTs - Modules
RoHs Status
Lead free / RoHS Compliant
Series
-
Quantity
9538pcs Stock Available.

Quick Order

Company
Contact
Phone
Email
Country
Content
Images are for reference only
See Product Specifications

Product Specifications

Part Number BSM200GD60DLCBOSA1
Description IGBT 2 LOW POWER ECONO3-1
Manufacturer Infineon Technologies
Series -
Part Status Not For New Designs
IGBT Type -
Configuration Full Bridge
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 226A
Power - Max 700W
Vce(on) (Max) @ Vge, Ic 2.45V @ 15V, 200A
Current - Collector Cutoff (Max) 500µA
Input Capacitance (Cies) @ Vce 9nF @ 25V
Input Standard
NTC Thermistor No
Operating Temperature -40°C ~ 125°C
Mounting Type Chassis Mount
Package / Case Module
Supplier Device Package Module

Latest Products for Transistors - IGBTs - Modules

APTGT30A170D1G

Microsemi Corporation

IGBT MODULE TRENCH PHASE LEG D1

APTGT30A60T1G

Microsemi Corporation

IGBT MODULE TRENCH PHASE LEG SP1

APTGT30DA170D1G

Microsemi Corporation

IGBT 1700V 45A 210W D1

APTGT30DA170T1G

Microsemi Corporation

IGBT 1700V 45A 210W SP1

APTGT30DDA60T3G

Microsemi Corporation

IGBT MOD TRENCH DL BST CHOP SP3

APTGT30DSK60T3G

Microsemi Corporation

IGBT MOD TRENCH DL BUCK CHOP SP3