Home / Products / Discrete Semiconductor Products / Diodes - Rectifiers - Single / JAN1N5417US
Part Number | JAN1N5417US |
Datasheet | JAN1N5417US datasheet |
Description | DIODE GEN PURP 200V 3A B-MELF |
Manufacturer | Microsemi Corporation |
Series | Military, MIL-PRF-19500/411 |
Part Status | Active |
Diode Type | Standard |
Voltage - DC Reverse (Vr) (Max) | 200V |
Current - Average Rectified (Io) | 3A |
Voltage - Forward (Vf) (Max) @ If | 1.5V @ 9A |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | 150ns |
Current - Reverse Leakage @ Vr | 1µA @ 200V |
Capacitance @ Vr, F | - |
Mounting Type | Surface Mount |
Package / Case | SQ-MELF, B |
Supplier Device Package | B, SQ-MELF |
Operating Temperature - Junction | -65°C ~ 175°C |