Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / PMGD280UN,115
Part Number | PMGD280UN,115 |
Datasheet | PMGD280UN,115 datasheet |
Description | MOSFET 2N-CH 20V 0.87A 6TSSOP |
Manufacturer | Nexperia USA Inc. |
Series | TrenchMOS™ |
Part Status | Active |
FET Type | 2 N-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 870mA |
Rds On (Max) @ Id, Vgs | 340 mOhm @ 200mA, 4.5V |
Vgs(th) (Max) @ Id | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 0.89nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 45pF @ 20V |
Power - Max | 400mW |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package | 6-TSSOP |