Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IRF6892STR1PBF
Part Number | IRF6892STR1PBF |
Datasheet | IRF6892STR1PBF datasheet |
Description | MOSFET N-CH 25V 28A S3 |
Manufacturer | Infineon Technologies |
Series | HEXFET® |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 25V |
Current - Continuous Drain (Id) @ 25°C | 28A (Ta), 125A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 1.7 mOhm @ 28A, 10V |
Vgs(th) (Max) @ Id | 2.1V @ 50µA |
Gate Charge (Qg) (Max) @ Vgs | 25nC @ 4.5V |
Vgs (Max) | ±16V |
Input Capacitance (Ciss) (Max) @ Vds | 2510pF @ 13V |
FET Feature | - |
Power Dissipation (Max) | 2.1W (Ta), 42W (Tc) |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | DIRECTFET™ S3C |
Package / Case | DirectFET™ Isometric S3C |