Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / EPC2007C
Part Number | EPC2007C |
Datasheet | EPC2007C datasheet |
Description | GANFET TRANS 100V 6A BUMPED DIE |
Manufacturer | EPC |
Series | eGaN® |
Part Status | Active |
FET Type | N-Channel |
Technology | GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 6A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 5V |
Rds On (Max) @ Id, Vgs | 30 mOhm @ 6A, 5V |
Vgs(th) (Max) @ Id | 2.5V @ 1.2mA |
Gate Charge (Qg) (Max) @ Vgs | 2.2nC @ 5V |
Vgs (Max) | +6V, -4V |
Input Capacitance (Ciss) (Max) @ Vds | 220pF @ 50V |
FET Feature | - |
Power Dissipation (Max) | - |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | Die Outline (5-Solder Bar) |
Package / Case | Die |