Product Introduction
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See Product Specifications
Product Specifications
Part Number |
IRF640L |
Datasheet |
IRF640L datasheet |
Description |
MOSFET N-CH 200V 18A TO-262 |
Manufacturer |
Vishay Siliconix |
Series |
- |
Part Status |
Obsolete |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
200V |
Current - Continuous Drain (Id) @ 25°C |
18A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Rds On (Max) @ Id, Vgs |
180 mOhm @ 11A, 10V |
Vgs(th) (Max) @ Id |
4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
70nC @ 10V |
Vgs (Max) |
±20V |
Input Capacitance (Ciss) (Max) @ Vds |
1300pF @ 25V |
FET Feature |
- |
Power Dissipation (Max) |
3.1W (Ta), 130W (Tc) |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Through Hole |
Supplier Device Package |
I2PAK |
Package / Case |
TO-262-3 Long Leads, I²Pak, TO-262AA |
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