Product Introduction
Images are for reference only
See Product Specifications
Product Specifications
Part Number |
FDG312P |
Datasheet |
FDG312P datasheet |
Description |
MOSFET P-CH 20V 1.2A SC70-6 |
Manufacturer |
ON Semiconductor |
Series |
PowerTrench® |
Part Status |
Active |
FET Type |
P-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
20V |
Current - Continuous Drain (Id) @ 25°C |
1.2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) |
2.5V, 4.5V |
Rds On (Max) @ Id, Vgs |
180 mOhm @ 1.2A, 4.5V |
Vgs(th) (Max) @ Id |
1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
5nC @ 4.5V |
Vgs (Max) |
±8V |
Input Capacitance (Ciss) (Max) @ Vds |
330pF @ 10V |
FET Feature |
- |
Power Dissipation (Max) |
750mW (Ta) |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
SC-88 (SC-70-6) |
Package / Case |
6-TSSOP, SC-88, SOT-363 |
Latest Products for Transistors - FETs, MOSFETs - Single
Infineon Technologies
MOSFET N-CH 650V 15A TO220-3
Infineon Technologies
MOSFET N-CH 560V 16A TO220FP
Infineon Technologies
MOSFET N-CH 800V 17A TO220FP
Infineon Technologies
MOSFET N-CH 600V 20.7A TO220-3
Infineon Technologies
MOSFET N-CH 650V 20.7A TO-220
Infineon Technologies
MOSFET N-CH 560V 21A TO220FP