Home / Products / Discrete Semiconductor Products / Transistors - IGBTs - Single / APT33GF120B2RDQ2G
Part Number | APT33GF120B2RDQ2G |
Datasheet | APT33GF120B2RDQ2G datasheet |
Description | IGBT 1200V 64A 357W TMAX |
Manufacturer | Microsemi Corporation |
Series | - |
Part Status | Active |
IGBT Type | NPT |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Current - Collector (Ic) (Max) | 64A |
Current - Collector Pulsed (Icm) | 75A |
Vce(on) (Max) @ Vge, Ic | 3V @ 15V, 25A |
Power - Max | 357W |
Switching Energy | 1.315mJ (on), 1.515mJ (off) |
Input Type | Standard |
Gate Charge | 170nC |
Td (on/off) @ 25°C | 14ns/185ns |
Test Condition | 800V, 25A, 4.3 Ohm, 15V |
Reverse Recovery Time (trr) | - |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-247-3 Variant |
Supplier Device Package | - |