Home / Products / Discrete Semiconductor Products / Transistors - IGBTs - Modules / DF200R12W1H3B27BOMA1
Product Introduction
DF200R12W1H3B27BOMA1
- Part Number
- DF200R12W1H3B27BOMA1
- Manufacturer/Brand
- Infineon Technologies
- Description
- IGBT MODULE VCES 1200V 200A
- Category
- Transistors - IGBTs - Modules
- RoHs Status
- Lead free / RoHS Compliant
- Series
- -
- Quantity
- 9493pcs Stock Available.
Images are for reference only
See Product Specifications
See Product Specifications
Product Specifications
| Part Number | DF200R12W1H3B27BOMA1 |
| Datasheet | DF200R12W1H3B27BOMA1 datasheet |
| Description | IGBT MODULE VCES 1200V 200A |
| Manufacturer | Infineon Technologies |
| Series | - |
| Part Status | Active |
| IGBT Type | - |
| Configuration | 2 Independent |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Current - Collector (Ic) (Max) | 30A |
| Power - Max | 375W |
| Vce(on) (Max) @ Vge, Ic | 1.3V @ 15V, 30A |
| Current - Collector Cutoff (Max) | 1mA |
| Input Capacitance (Cies) @ Vce | 2nF @ 25V |
| Input | Standard |
| NTC Thermistor | Yes |
| Operating Temperature | -40°C ~ 150°C |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Supplier Device Package | Module |
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