Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IRFH3707TR2PBF
Part Number | IRFH3707TR2PBF |
Datasheet | IRFH3707TR2PBF datasheet |
Description | MOSFET N-CH 30V 12A PQFN33 |
Manufacturer | Infineon Technologies |
Series | HEXFET® |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 12A (Ta), 29A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 12.4 mOhm @ 12A, 10V |
Vgs(th) (Max) @ Id | 2.35V @ 25µA |
Gate Charge (Qg) (Max) @ Vgs | 8.1nC @ 4.5V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 755pF @ 15V |
FET Feature | - |
Power Dissipation (Max) | 2.8W (Ta) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-PQFN (3x3) |
Package / Case | 8-PowerVDFN |