
Home / Products / Isolators / Optoisolators - Transistor, Photovoltaic Output / H11G2M_F132

| Part Number | H11G2M_F132 |
| Datasheet | H11G2M_F132 datasheet |
| Description | OPTOISO 4.17KV DARL W/BASE 6DIP |
| Manufacturer | ON Semiconductor |
| Series | - |
| Part Status | Obsolete |
| Number of Channels | 1 |
| Voltage - Isolation | 4170Vrms |
| Current Transfer Ratio (Min) | 1000% @ 10mA |
| Current Transfer Ratio (Max) | - |
| Turn On / Turn Off Time (Typ) | 5µs, 100µs |
| Rise / Fall Time (Typ) | - |
| Input Type | DC |
| Output Type | Darlington with Base |
| Voltage - Output (Max) | 80V |
| Current - Output / Channel | - |
| Voltage - Forward (Vf) (Typ) | 1.3V |
| Current - DC Forward (If) (Max) | 60mA |
| Vce Saturation (Max) | 1V |
| Operating Temperature | -40°C ~ 100°C |
| Mounting Type | Through Hole |
| Package / Case | 6-DIP (0.300", 7.62mm) |
| Supplier Device Package | 6-DIP |