Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / SISS26DN-T1-GE3

Product Introduction

SISS26DN-T1-GE3

Part Number
SISS26DN-T1-GE3
Manufacturer/Brand
Vishay Siliconix
Description
MOSFET N-CHANNEL 60V 60A 1212-8S
Category
Transistors - FETs, MOSFETs - Single
RoHs Status
Lead free / RoHS Compliant
Series
TrenchFET® Gen IV
Quantity
15198pcs Stock Available.

Quick Order

Company
Contact
Phone
Email
Country
Content
Images are for reference only
See Product Specifications

Product Specifications

Part Number SISS26DN-T1-GE3
Datasheet SISS26DN-T1-GE3 datasheet
Description MOSFET N-CHANNEL 60V 60A 1212-8S
Manufacturer Vishay Siliconix
Series TrenchFET® Gen IV
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 4.5 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 3.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 37nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1710pF @ 30V
FET Feature -
Power Dissipation (Max) 57W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 1212-8S (3.3x3.3)
Package / Case PowerPAK® 1212-8S

Latest Products for Transistors - FETs, MOSFETs - Single

SIHB23N60E-GE3

Vishay Siliconix

MOSFET N-CH 600V 23A D2PAK

SIHB24N65E-E3

Vishay Siliconix

MOSFET N-CH 650V 24A D2PAK

SIHB24N65ET1-GE3

Vishay Siliconix

MOSFET N-CH 650V 24A TO263

SIHB24N65ET5-GE3

Vishay Siliconix

MOSFET N-CH 650V 24A TO263

SIHB30N60E-E3

Vishay Siliconix

MOSFET N-CH 600V 29A D2PAK

SIHB30N60E-GE3

Vishay Siliconix

MOSFET N-CH 600V 29A D2PAK