Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF / 55GN01MA-TL-E

Product Introduction

55GN01MA-TL-E

Part Number
55GN01MA-TL-E
Manufacturer/Brand
ON Semiconductor
Description
RF TRANS NPN 10V 5.5GHZ 3MCP
Category
Transistors - Bipolar (BJT) - RF
RoHs Status
Lead free / RoHS Compliant
Series
-
Quantity
3168pcs Stock Available.

Quick Order

Company
Contact
Phone
Email
Country
Content
Images are for reference only
See Product Specifications

Product Specifications

Part Number 55GN01MA-TL-E
Datasheet 55GN01MA-TL-E datasheet
Description RF TRANS NPN 10V 5.5GHZ 3MCP
Manufacturer ON Semiconductor
Series -
Part Status Active
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 10V
Frequency - Transition 4.5GHz ~ 5.5GHz
Noise Figure (dB Typ @ f) 1.9dB @ 1GHz
Gain 10dB @ 1GHz
Power - Max 400mW
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA, 5V
Current - Collector (Ic) (Max) 70mA
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Supplier Device Package 3-MCP

Latest Products for Transistors - Bipolar (BJT) - RF

2SC5084-O(TE85L,F)

Toshiba Semiconductor and Storage

RF TRANS NPN 12V 7GHZ SMINI

MT3S111(TE85L,F)

Toshiba Semiconductor and Storage

RF TRANS NPN 6V 11.5GHZ SMINI

2SC4915-O,LF

Toshiba Semiconductor and Storage

RF TRANS NPN 30V 550MHZ SSM

2SC5066-O,LF

Toshiba Semiconductor and Storage

RF TRANS NPN 12V 7GHZ SSM

2SC5086-O,LF

Toshiba Semiconductor and Storage

RF TRANS NPN 12V 7GHZ SSM

2SC5086-Y,LF

Toshiba Semiconductor and Storage

RF TRANS NPN 12V 7GHZ SSM