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Product Introduction

RN1103MFV,L3F

Part Number
RN1103MFV,L3F
Manufacturer/Brand
Toshiba Semiconductor and Storage
Description
TRANS PREBIAS NPN 150MW VESM
Category
Transistors - Bipolar (BJT) - Single, Pre-Biased
RoHs Status
Lead free / RoHS Compliant
Series
-
Quantity
119pcs Stock Available.

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Product Specifications

Part Number RN1103MFV,L3F
Description TRANS PREBIAS NPN 150MW VESM
Manufacturer Toshiba Semiconductor and Storage
Series -
Part Status Active
Transistor Type NPN - Pre-Biased
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 22 kOhms
Resistor - Emitter Base (R2) 22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max) 500nA
Frequency - Transition -
Power - Max 150mW
Mounting Type Surface Mount
Package / Case SOT-723
Supplier Device Package VESM

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