Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / DMJ70H600SH3
Part Number | DMJ70H600SH3 |
Datasheet | DMJ70H600SH3 datasheet |
Description | MOSFET BVDSS 651V 800V TO251 |
Manufacturer | Diodes Incorporated |
Series | Automotive, AEC-Q101 |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 700V |
Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 600 mOhm @ 2.4A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 18.2nC @ 10V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 643pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 113W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-251 |
Package / Case | TO-251-3, IPak, Short Leads |