Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / MVB50P03HDLT4G
Part Number | MVB50P03HDLT4G |
Datasheet | MVB50P03HDLT4G datasheet |
Description | INTEGRATED CIRCUIT |
Manufacturer | ON Semiconductor |
Series | Automotive, AEC-Q101 |
Part Status | Obsolete |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 5V |
Rds On (Max) @ Id, Vgs | 25 mOhm @ 25A, 5V |
Vgs(th) (Max) @ Id | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 100nC @ 5V |
Vgs (Max) | ±15V |
Input Capacitance (Ciss) (Max) @ Vds | 4.9nF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 125W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D2PAK-3 |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |