Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IPI35CN10N G
Part Number | IPI35CN10N G |
Datasheet | IPI35CN10N G datasheet |
Description | MOSFET N-CH 100V 27A TO262-3 |
Manufacturer | Infineon Technologies |
Series | OptiMOS™ |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 27A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 35 mOhm @ 27A, 10V |
Vgs(th) (Max) @ Id | 4V @ 29µA |
Gate Charge (Qg) (Max) @ Vgs | 24nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 1570pF @ 50V |
FET Feature | - |
Power Dissipation (Max) | 58W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PG-TO262-3 |
Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |