Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased / RN2112,LF(CT

Product Introduction

RN2112,LF(CT

Part Number
RN2112,LF(CT
Manufacturer/Brand
Toshiba Semiconductor and Storage
Description
TRANS PREBIAS PNP 50V 0.1W SSM
Category
Transistors - Bipolar (BJT) - Single, Pre-Biased
RoHs Status
Lead free / RoHS Compliant
Series
-
Quantity
3165pcs Stock Available.

Quick Order

Company
Contact
Phone
Email
Country
Content
Images are for reference only
See Product Specifications

Product Specifications

Part Number RN2112,LF(CT
Description TRANS PREBIAS PNP 50V 0.1W SSM
Manufacturer Toshiba Semiconductor and Storage
Series -
Part Status Active
Transistor Type PNP - Pre-Biased
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 22 kOhms
Resistor - Emitter Base (R2) -
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) 100nA (ICBO)
Frequency - Transition 200MHz
Power - Max 100mW
Mounting Type Surface Mount
Package / Case SC-75, SOT-416
Supplier Device Package SSM

Latest Products for Transistors - Bipolar (BJT) - Single, Pre-Biased

BCR116WH6327XTSA1

Infineon Technologies

TRANS PREBIAS NPN 250MW SOT323-3

BCR119WE6327HTSA1

Infineon Technologies

TRANS PREBIAS NPN 250MW SOT323-3

BCR119WH6327XTSA1

Infineon Technologies

TRANS PREBIAS NPN 250MW SOT323-3

BCR129WE6327HTSA1

Infineon Technologies

TRANS PREBIAS NPN 250MW SOT323-3

BCR129WH6327XTSA1

Infineon Technologies

TRANS PREBIAS NPN 250MW SOT323-3

BCR133WE6327HTSA1

Infineon Technologies

TRANS PREBIAS NPN 250MW SOT323-3