Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / BSZ0910NDXTMA1
Part Number | BSZ0910NDXTMA1 |
Datasheet | BSZ0910NDXTMA1 datasheet |
Description | DIFFERENTIATED MOSFETS |
Manufacturer | Infineon Technologies |
Series | OptiMOS™ |
Part Status | Active |
FET Type | 2 N-Channel (Dual) |
FET Feature | Logic Level Gate, 4.5V Drive |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 9.5A (Ta), 25A (Tc) |
Rds On (Max) @ Id, Vgs | 9.5 mOhm @ 9A, 10V |
Vgs(th) (Max) @ Id | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 5.6nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 800pF @ 15V |
Power - Max | 1.9W (Ta), 31W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-PowerVDFN |
Supplier Device Package | PG-WISON-8 |