Home / Products / Integrated Circuits (ICs) / Memory / BQ4014YMB-120

Product Introduction

BQ4014YMB-120

Part Number
BQ4014YMB-120
Manufacturer/Brand
Texas Instruments
Description
IC NVSRAM 2M PARALLEL 32DIP
Category
Memory
RoHs Status
Lead free / RoHS Compliant
Series
-
Quantity
6774pcs Stock Available.

Quick Order

Company
Contact
Phone
Email
Country
Content
Images are for reference only
See Product Specifications

Product Specifications

Part Number BQ4014YMB-120
Datasheet BQ4014YMB-120 datasheet
Description IC NVSRAM 2M PARALLEL 32DIP
Manufacturer Texas Instruments
Series -
Part Status Obsolete
Memory Type Non-Volatile
Memory Format NVSRAM
Technology NVSRAM (Non-Volatile SRAM)
Memory Size 2Mb (256K x 8)
Clock Frequency -
Write Cycle Time - Word, Page 120ns
Access Time 120ns
Memory Interface Parallel
Voltage - Supply 4.5V ~ 5.5V
Operating Temperature 0°C ~ 70°C (TA)
Mounting Type Through Hole
Package / Case 32-DIP Module (0.61", 15.49mm)
Supplier Device Package 32-DIP Module (18.42x52.96)

Latest Products for Memory

W632GG6KB12J

Winbond Electronics

IC DRAM 2G PARALLEL 800MHZ

W632GG6KB15I

Winbond Electronics

IC DRAM 2G PARALLEL 96WBGA

W632GG6KB15I TR

Winbond Electronics

IC DRAM 2G PARALLEL 96WBGA

W632GG6KB15J

Winbond Electronics

IC DRAM 2G PARALLEL 667MHZ

W632GU6KB-11

Winbond Electronics

IC DRAM 2G PARALLEL 933MHZ

W632GU6KB-12

Winbond Electronics

IC DRAM 2G PARALLEL 96WBGA