Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF / BFS481H6327XTSA1
Part Number | BFS481H6327XTSA1 |
Datasheet | BFS481H6327XTSA1 datasheet |
Description | RF TRANS 2 NPN 12V 8GHZ SOT363-6 |
Manufacturer | Infineon Technologies |
Series | - |
Part Status | Active |
Transistor Type | 2 NPN (Dual) |
Voltage - Collector Emitter Breakdown (Max) | 12V |
Frequency - Transition | 8GHz |
Noise Figure (dB Typ @ f) | 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz |
Gain | 20dB |
Power - Max | 175mW |
DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 5mA, 8V |
Current - Collector (Ic) (Max) | 20mA |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 6-VSSOP, SC-88, SOT-363 |
Supplier Device Package | P-SOT363-6 |