Home / Products / Integrated Circuits (ICs) / Memory / MT29E4T08CTHBBM5-3:B

Product Introduction

MT29E4T08CTHBBM5-3:B

Part Number
MT29E4T08CTHBBM5-3:B
Manufacturer/Brand
Micron Technology Inc.
Description
IC FLASH 4T PARALLEL 333MHZ
Category
Memory
RoHs Status
Lead free / RoHS Compliant
Series
-
Quantity
5pcs Stock Available.

Quick Order

Company
Contact
Phone
Email
Country
Content
Images are for reference only
See Product Specifications

Product Specifications

Part Number MT29E4T08CTHBBM5-3:B
Datasheet MT29E4T08CTHBBM5-3:B datasheet
Description IC FLASH 4T PARALLEL 333MHZ
Manufacturer Micron Technology Inc.
Series -
Part Status Active
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NAND
Memory Size 4Tb (512G x 8)
Clock Frequency 333MHz
Write Cycle Time - Word, Page -
Access Time -
Memory Interface Parallel
Voltage - Supply 2.5V ~ 3.6V
Operating Temperature 0°C ~ 70°C (TA)
Mounting Type -
Package / Case -
Supplier Device Package -

Latest Products for Memory

MT53E2G32D8QD-053 WT:E TR

Micron Technology Inc.

LPDDR4 64G 2GX32 FBGA WT 8DP

MT53E512M32D2NP-046 WT:E

Micron Technology Inc.

LPDDR4 16G 512MX32 FBGA WT DDP

MT53E512M32D2NP-046 WT:E TR

Micron Technology Inc.

LPDDR4 16G 512MX32 FBGA WT DDP

MT53E512M64D4NW-053 WT:E

Micron Technology Inc.

LPDDR4 32G 512MX64 FBGA WT QDP

MT53E512M64D4NW-053 WT:E TR

Micron Technology Inc.

LPDDR4 32G 512MX64 FBGA WT QDP

NV25080DWHFT3G

ON Semiconductor

8KB SPI SER CMOS EEPROM