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Part Number | MURT20010R |
Datasheet | MURT20010R datasheet |
Description | DIODE MODULE 100V 200A 3TOWER |
Manufacturer | GeneSiC Semiconductor |
Series | - |
Part Status | Active |
Diode Configuration | 1 Pair Common Anode |
Diode Type | Standard |
Voltage - DC Reverse (Vr) (Max) | 100V |
Current - Average Rectified (Io) (per Diode) | 200A (DC) |
Voltage - Forward (Vf) (Max) @ If | 1.3V @ 100A |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | 75ns |
Current - Reverse Leakage @ Vr | 25µA @ 50V |
Operating Temperature - Junction | - |
Mounting Type | Chassis Mount |
Package / Case | Three Tower |
Supplier Device Package | Three Tower |