Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / SI1070X-T1-GE3
Part Number | SI1070X-T1-GE3 |
Datasheet | SI1070X-T1-GE3 datasheet |
Description | MOSFET N-CH 30V 1.2A SOT563F |
Manufacturer | Vishay Siliconix |
Series | TrenchFET® |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | - |
Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs | 99 mOhm @ 1.2A, 4.5V |
Vgs(th) (Max) @ Id | 1.55V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 8.3nC @ 5V |
Vgs (Max) | ±12V |
Input Capacitance (Ciss) (Max) @ Vds | 385pF @ 15V |
FET Feature | - |
Power Dissipation (Max) | 236mW (Ta) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | SC-89-6 |
Package / Case | SOT-563, SOT-666 |