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Product Introduction

TPW1R306PL,L1Q

Part Number
TPW1R306PL,L1Q
Manufacturer/Brand
Toshiba Semiconductor and Storage
Description
X35 PB-F POWER MOSFET TRANSISTOR
Category
Transistors - FETs, MOSFETs - Single
RoHs Status
Lead free / RoHS Compliant
Series
U-MOSIX-H
Quantity
10149pcs Stock Available.

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Product Specifications

Part Number TPW1R306PL,L1Q
Datasheet TPW1R306PL,L1Q datasheet
Description X35 PB-F POWER MOSFET TRANSISTOR
Manufacturer Toshiba Semiconductor and Storage
Series U-MOSIX-H
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 260A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.29 mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 91nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 8100pF @ 30V
FET Feature -
Power Dissipation (Max) 960mW (Ta), 170W (Tc)
Operating Temperature 175°C
Mounting Type Surface Mount
Supplier Device Package 8-DSOP Advance
Package / Case 8-PowerVDFN

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