Home / Products / Discrete Semiconductor Products / Transistors - JFETs / 2SK879-GR(TE85L,F)
Part Number | 2SK879-GR(TE85L,F) |
Datasheet | 2SK879-GR(TE85L,F) datasheet |
Description | JFET N-CH 0.1W USM |
Manufacturer | Toshiba Semiconductor and Storage |
Series | - |
Part Status | Active |
FET Type | N-Channel |
Voltage - Breakdown (V(BR)GSS) | - |
Drain to Source Voltage (Vdss) | - |
Current - Drain (Idss) @ Vds (Vgs=0) | 2.6mA @ 10V |
Current Drain (Id) - Max | - |
Voltage - Cutoff (VGS off) @ Id | 400mV @ 100nA |
Input Capacitance (Ciss) (Max) @ Vds | 8.2pF @ 10V |
Resistance - RDS(On) | - |
Power - Max | 100mW |
Operating Temperature | 125°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | SC-70, SOT-323 |
Supplier Device Package | USM |