Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / VP2206N2
Part Number | VP2206N2 |
Datasheet | VP2206N2 datasheet |
Description | MOSFET P-CH 60V 750MA 3TO-39 |
Manufacturer | Microchip Technology |
Series | - |
Part Status | Active |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 750mA (Tj) |
Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
Rds On (Max) @ Id, Vgs | 900 mOhm @ 3.5A, 10V |
Vgs(th) (Max) @ Id | 3.5V @ 10mA |
Gate Charge (Qg) (Max) @ Vgs | - |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 450pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 360mW (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-39 |
Package / Case | TO-205AD, TO-39-3 Metal Can |