
Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased / DTC114EEBTL

| Part Number | DTC114EEBTL |
| Datasheet | DTC114EEBTL datasheet |
| Description | TRANS PREBIAS NPN 150MW EMT3F |
| Manufacturer | Rohm Semiconductor |
| Series | - |
| Part Status | Not For New Designs |
| Transistor Type | NPN - Pre-Biased |
| Current - Collector (Ic) (Max) | 50mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Resistor - Base (R1) | 10 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 5V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| Frequency - Transition | 250MHz |
| Power - Max | 150mW |
| Mounting Type | Surface Mount |
| Package / Case | SC-89, SOT-490 |
| Supplier Device Package | EMT3F (SOT-416FL) |