Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / PHD3055E,118
Part Number | PHD3055E,118 |
Datasheet | PHD3055E,118 datasheet |
Description | MOSFET N-CH 60V 10.3A DPAK |
Manufacturer | NXP USA Inc. |
Series | TrenchMOS™ |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 10.3A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 150 mOhm @ 5.5A, 10V |
Vgs(th) (Max) @ Id | 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 5.8nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 250pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 33W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | DPAK |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |