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Product Introduction
SI8809EDB-T2-E1
- Part Number
- SI8809EDB-T2-E1
- Manufacturer/Brand
- Vishay Siliconix
- Description
- MOSFET P-CH 20V 1.9A MICROFOOT
- Category
- Transistors - FETs, MOSFETs - Single
- RoHs Status
- Lead free / RoHS Compliant
- Series
- TrenchFET®
- Quantity
- 436pcs Stock Available.
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See Product Specifications
See Product Specifications
Product Specifications
| Part Number | SI8809EDB-T2-E1 |
| Datasheet | SI8809EDB-T2-E1 datasheet |
| Description | MOSFET P-CH 20V 1.9A MICROFOOT |
| Manufacturer | Vishay Siliconix |
| Series | TrenchFET® |
| Part Status | Obsolete |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | - |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Rds On (Max) @ Id, Vgs | 90 mOhm @ 1.5A, 4.5V |
| Vgs(th) (Max) @ Id | 900mV @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 15nC @ 8V |
| Vgs (Max) | ±8V |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| FET Feature | - |
| Power Dissipation (Max) | 500mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 4-Microfoot |
| Package / Case | 4-XFBGA |
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