Home / Products / Discrete Semiconductor Products / Transistors - IGBTs - Single / IXXP12N65B4D1
Part Number | IXXP12N65B4D1 |
Datasheet | IXXP12N65B4D1 datasheet |
Description | IGBT |
Manufacturer | IXYS |
Series | XPT™, GenX4™ |
Part Status | Active |
IGBT Type | - |
Voltage - Collector Emitter Breakdown (Max) | 650V |
Current - Collector (Ic) (Max) | 38A |
Current - Collector Pulsed (Icm) | 70A |
Vce(on) (Max) @ Vge, Ic | 1.95V @ 15V, 12A |
Power - Max | 160W |
Switching Energy | 440µJ (on), 220µJ (off) |
Input Type | Standard |
Gate Charge | 34nC |
Td (on/off) @ 25°C | 13ns/158ns |
Test Condition | 400V, 12A, 20 Ohm, 15V |
Reverse Recovery Time (trr) | 43ns |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Supplier Device Package | TO-220 |