Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / FDD86367
Part Number | FDD86367 |
Datasheet | FDD86367 datasheet |
Description | MOSFET N-CHANNEL 80V 100A TO252 |
Manufacturer | ON Semiconductor |
Series | Automotive, AEC-Q101, PowerTrench® |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 80V |
Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 4.2 mOhm @ 80A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 88nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 4840pF @ 40V |
FET Feature | - |
Power Dissipation (Max) | 227W (Tj) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D-PAK (TO-252) |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |