Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / PMV60EN,215
Part Number | PMV60EN,215 |
Description | MOSFET N-CH 30V 4.7A SOT-23 |
Manufacturer | NXP USA Inc. |
Series | TrenchMOS™ |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 4.7A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 55 mOhm @ 2A, 10V |
Vgs(th) (Max) @ Id | 2V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 9.4nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 350pF @ 30V |
FET Feature | - |
Power Dissipation (Max) | 280mW (Tj) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | TO-236AB (SOT23) |
Package / Case | TO-236-3, SC-59, SOT-23-3 |