Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased / RN1117(T5L,F,T)

Product Introduction

RN1117(T5L,F,T)

Part Number
RN1117(T5L,F,T)
Manufacturer/Brand
Toshiba Semiconductor and Storage
Description
TRANS PREBIAS NPN 0.1W SSM
Category
Transistors - Bipolar (BJT) - Single, Pre-Biased
RoHs Status
Lead free / RoHS Compliant
Series
-
Quantity
4701pcs Stock Available.

Quick Order

Company
Contact
Phone
Email
Country
Content
Images are for reference only
See Product Specifications

Product Specifications

Part Number RN1117(T5L,F,T)
Datasheet RN1117(T5L,F,T) datasheet
Description TRANS PREBIAS NPN 0.1W SSM
Manufacturer Toshiba Semiconductor and Storage
Series -
Part Status Discontinued at Digi-Key
Transistor Type NPN - Pre-Biased
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 10 kOhms
Resistor - Emitter Base (R2) 4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) 500nA
Frequency - Transition 250MHz
Power - Max 100mW
Mounting Type Surface Mount
Package / Case SC-75, SOT-416
Supplier Device Package SSM

Latest Products for Transistors - Bipolar (BJT) - Single, Pre-Biased

BCR185WE6327BTSA1

Infineon Technologies

TRANS PREBIAS PNP 250MW SOT323-3

BCR185WH6327XTSA1

Infineon Technologies

TRANS PREBIAS PNP 0.25W SOT323-3

BCR191WE6327HTSA1

Infineon Technologies

TRANS PREBIAS PNP 250MW SOT323-3

BCR191WH6327XTSA1

Infineon Technologies

TRANS PREBIAS PNP 250MW SOT323-3

BCR192WE6327HTSA1

Infineon Technologies

TRANS PREBIAS PNP 250MW SOT323-3

BCR192WH6327XTSA1

Infineon Technologies

TRANS PREBIAS PNP 250MW SOT323-3