Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / DMN2005UFG-13
Part Number | DMN2005UFG-13 |
Datasheet | DMN2005UFG-13 datasheet |
Description | MOSFET N-CH 20V 18.1A POWERDI-8 |
Manufacturer | Diodes Incorporated |
Series | - |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 18.1A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs | 4.6 mOhm @ 13.5A, 4.5V |
Vgs(th) (Max) @ Id | 1.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 164nC @ 10V |
Vgs (Max) | ±12V |
Input Capacitance (Ciss) (Max) @ Vds | 6495pF @ 10V |
FET Feature | - |
Power Dissipation (Max) | 1.05W (Ta) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PowerDI3333-8 |
Package / Case | 8-PowerWDFN |