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Product Introduction

SI7190DP-T1-GE3

Part Number
SI7190DP-T1-GE3
Manufacturer/Brand
Vishay Siliconix
Description
MOSFET N-CH 250V 18.4A PPAK SO-8
Category
Transistors - FETs, MOSFETs - Single
RoHs Status
Lead free / RoHS Compliant
Series
TrenchFET®
Quantity
6144pcs Stock Available.

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Product Specifications

Part Number SI7190DP-T1-GE3
Datasheet SI7190DP-T1-GE3 datasheet
Description MOSFET N-CH 250V 18.4A PPAK SO-8
Manufacturer Vishay Siliconix
Series TrenchFET®
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 250V
Current - Continuous Drain (Id) @ 25°C 18.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 118 mOhm @ 4.4A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 72nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2214pF @ 125V
FET Feature -
Power Dissipation (Max) 5.4W (Ta), 96W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8

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