Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / SI7922DN-T1-E3
Part Number | SI7922DN-T1-E3 |
Datasheet | SI7922DN-T1-E3 datasheet |
Description | MOSFET 2N-CH 100V 1.8A 1212-8 |
Manufacturer | Vishay Siliconix |
Series | TrenchFET® |
Part Status | Active |
FET Type | 2 N-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 1.8A |
Rds On (Max) @ Id, Vgs | 195 mOhm @ 2.5A, 10V |
Vgs(th) (Max) @ Id | 3.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 8nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Power - Max | 1.3W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | PowerPAK® 1212-8 Dual |
Supplier Device Package | PowerPAK® 1212-8 Dual |