Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IXFN50N120SIC
Part Number | IXFN50N120SIC |
Datasheet | IXFN50N120SIC datasheet |
Description | MOSFET N-CH |
Manufacturer | IXYS |
Series | - |
Part Status | Active |
FET Type | N-Channel |
Technology | SiC (Silicon Carbide Junction Transistor) |
Drain to Source Voltage (Vdss) | 1200V |
Current - Continuous Drain (Id) @ 25°C | 47A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 20V |
Rds On (Max) @ Id, Vgs | 50 mOhm @ 40A, 20V |
Vgs(th) (Max) @ Id | 2.2V @ 2mA |
Gate Charge (Qg) (Max) @ Vgs | 100nC @ 20V |
Vgs (Max) | +20V, -5V |
Input Capacitance (Ciss) (Max) @ Vds | 1900pF @ 1000V |
FET Feature | - |
Power Dissipation (Max) | - |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Chassis Mount |
Supplier Device Package | SOT-227B |
Package / Case | SOT-227-4, miniBLOC |