Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / SI1029X-T1-E3
Part Number | SI1029X-T1-E3 |
Datasheet | SI1029X-T1-E3 datasheet |
Description | MOSFET N/P-CH 60V SOT563F |
Manufacturer | Vishay Siliconix |
Series | TrenchFET® |
Part Status | Obsolete |
FET Type | N and P-Channel |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 305mA, 190mA |
Rds On (Max) @ Id, Vgs | 1.4 Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 0.75nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 30pF @ 25V |
Power - Max | 250mW |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | SOT-563, SOT-666 |
Supplier Device Package | SC-89-6 |