Product Introduction
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Product Specifications
Part Number |
EPC2018 |
Datasheet |
EPC2018 datasheet |
Description |
GANFET TRANS 150V 12A BUMPED DIE |
Manufacturer |
EPC |
Series |
eGaN® |
Part Status |
Discontinued at Digi-Key |
FET Type |
N-Channel |
Technology |
GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss) |
150V |
Current - Continuous Drain (Id) @ 25°C |
12A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) |
5V |
Rds On (Max) @ Id, Vgs |
25 mOhm @ 6A, 5V |
Vgs(th) (Max) @ Id |
2.5V @ 3mA |
Gate Charge (Qg) (Max) @ Vgs |
7.5nC @ 5V |
Vgs (Max) |
+6V, -5V |
Input Capacitance (Ciss) (Max) @ Vds |
540pF @ 100V |
FET Feature |
- |
Power Dissipation (Max) |
- |
Operating Temperature |
-40°C ~ 125°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
Die |
Package / Case |
Die |
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