Home / Products / Discrete Semiconductor Products / Diodes - Rectifiers - Single / 1N5408GHB0G
Part Number | 1N5408GHB0G |
Datasheet | 1N5408GHB0G datasheet |
Description | DIODE GEN PURP 3A DO201AD |
Manufacturer | Taiwan Semiconductor Corporation |
Series | Automotive, AEC-Q101 |
Part Status | Active |
Diode Type | Standard |
Voltage - DC Reverse (Vr) (Max) | - |
Current - Average Rectified (Io) | 3A |
Voltage - Forward (Vf) (Max) @ If | 1V @ 3A |
Speed | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | - |
Current - Reverse Leakage @ Vr | 5µA @ 1000V |
Capacitance @ Vr, F | 25pF @ 4V, 1MHz |
Mounting Type | Through Hole |
Package / Case | DO-201AD, Axial |
Supplier Device Package | DO-201AD |
Operating Temperature - Junction | -55°C ~ 150°C |