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Part Number | 2SJ681(Q) |
Datasheet | 2SJ681(Q) datasheet |
Description | MOSFET P-CH 60V 5A PW-MOLD |
Manufacturer | Toshiba Semiconductor and Storage |
Series | - |
Part Status | Obsolete |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
Rds On (Max) @ Id, Vgs | 170 mOhm @ 2.5A, 10V |
Vgs(th) (Max) @ Id | 2V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 15nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 700pF @ 10V |
FET Feature | - |
Power Dissipation (Max) | 20W (Ta) |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PW-MOLD2 |
Package / Case | TO-251-3 Stub Leads, IPak |