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| Part Number | TPH6400ENH,L1Q |
| Datasheet | TPH6400ENH,L1Q datasheet |
| Description | MOSFET N-CH 200V 21A 8-SOP |
| Manufacturer | Toshiba Semiconductor and Storage |
| Series | U-MOSVIII-H |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25°C | 13A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 64 mOhm @ 6.5A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 300µA |
| Gate Charge (Qg) (Max) @ Vgs | 11.2nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1100pF @ 100V |
| FET Feature | - |
| Power Dissipation (Max) | 1.6W (Ta), 57W (Tc) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SOP Advance (5x5) |
| Package / Case | 8-PowerVDFN |